Congreso: XXIII Simposium Nacional de la Unión Científica Internacional de Radio (URSI 2008). 22-24 septiembre 2008. Madrid, España.

Autores: M. Ángeles González Garrido, Jesús Grajal de la Fuente.

In this paper, we report the design of a GaN-based broad-band power amplifier using as active devices GaN high electron mobility transistors (HEMTs) grown on SiC substrates. The circuit is a 2-stage amplifier with microstrip corporative division/combination networks. Using devices with 0.5 μm gate length and 1 mm gate width, a small-signal gain higher than 15 dB was obtained with 2-6 GHz bandwidth. An output power of 12.5W at 25 V is achieved in broadband and a saturation power of 18W at 4.5GHz is reported. The measured power-added efficiency is about 25-30% at 25 V.