Congreso internacional:
Año: 2011, Validation of load-independent X-parameters® formulation for use in Analytical Circuit Design
Congreso: Active RF Devices, Circuits and Systems Seminar. Organised by the IET’s RF and Microwave Technology Network. 12 September 2011. The Institute of Electronics, Communications and Information Technology (ECIT). Queen’s University Belfast. Belfast, Ireland.
Autores: Ana Peláez Pérez; José I. Alonso; M. Fernández Barciela; P.J. Tasker.
Recently analytical behavioral model formulation based on the PHD model has been introduced and successfully used to describe the nonlinear behavior of transistors and components [1-3]. The next important advance would be to utilize this formulation, constraint to load-independent X parameters, to enable analytical non-linear microwave circuit design procedures. For this purpose, in this paper a blind iterative process is presented and validated in order to obtain the appropriate load independent X parameters, focused around the chosen optimum impedance condition, necessary to enable accurate analytical non-linear circuit design to be undertaken.
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