Revista: Microwave Journal. Abril 1998

Autores: F.J. Ortega, A. Asensio , J.L. Jimenez, G. Torregrosa

To date, one of the most important design methods for RF power amplifiers (PA) still consists of matching the large-signal input and load impedances of an active device. These large-signal impedances are supplied by the manufacturer of the active devices or are measured directly by the user. In both cases, the output power level and efficiency are associated with those large-signal impedances. Nevertheless, in practice, the output power, efficiency and even the operation mode depend not only on the large-signal impedances but also on the matching networks used to provide the recommended loads for the transistor. This phenomenon is caused by the high frequency behavior of the matching networks.