Revista: Microwave ans Optical Technology Letters. Vol. 5. No. 1. Pp. 10-16. Enero 1992.

Autores: A. Asensio , F. Pérez

This article introduces a model for high-power microwave bipolar transistors and its associated parameter-measuring strategy, whose inclusion of thermal phenomena in the de characterization allows a good estimate of the devices thermal resistance to be obtained. This type of model provides important capabilities for solid-state radar transmitter design.