Revista: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. Vol.26. No.5. 11 pp. 2011

Autores: D. PARDO, J .GRAJAL, B. MENCÍA, S. PÉREZ, J. MATEOS Y T. GONZÁLEZ

The Monte Carlo method is applied in this paper to characterize the noise GaN Schottky barrier diodes operating under static and time varying conditions. in?uence of the structure of the diode and working regimes on the noise spectrum diodes. Besides, the paper evaluates the capabilities of published analytical the noise spectra in Schottky diodes under time varying conditions. This itoward the development of a design tool that integrates both the electrical intrinsic noise generated in the devices.