Congreso: XXXIII Simposium Nacional de la Unión Científica Internacional de Radio (URSI 2018). Granada. 5-7 septiembre 2018.

Autores: Jesús Grajal de la Fuente; Eduardo Oreja Gigorro; Emilio Delgado Pascual; Juan José Sánchez Martínez; María Luz Gil Heras;

A 6-18 GHz high power amplifier (HPA) design in GaN on SiC technology is presented. This power amplifier consists of a two stage corporate amplifier which shows an unconditional stable behavior. It has been designed at Indra Sistemas and fabricated following the GH25 process from UMS, using a 0.25 ?m gate length. Small and large signal measurements in pulsed conditions and their comparison with simulations are also discussed. This HPA exhibits an averaged output power of 39.2 dBm with a mean gain of 11 dB in saturation and a 24.5% maximum power added efficiency (PAE) in pulse mode operation.