Congreso: IET Seminar on Active RF Devices, circuits and systems 2011. Belfast, UK. 12 september 2011.

Autores: A. M. Peláez-Pérez, J. I. Alonso, M. Fernández-Barciela, P. J. Tasker.

Recently analytical behavioral model formulation based on the PHD model has been introduced and successfully used to describe the nonlinear behavior of transistors and components [1–3]. The next important advance would be to utilize this formulation, constraint to load-independent X parameters, to enable analytical non-linear microwave circuit design procedures. For this purpose, in this paper a blind iterative process is presented and validated in order to obtain the appropriate load-independent X parameters, focused around the chosen optimum impedance condition, necessary to enable accurate analytical non-linear circuit design to be undertaken.