Congreso internacional:

Año: 2011, Static and large signal noise analysis in GaAs and GaN Schottky diodes for high frequency applications

Medio de publicación:

Congreso: 8th Spanish Conference on Electron Devices. Palma de Mallorca, (España). 8-11 de Febrero 2011.

Autores: Diego Pardo, Jesús Grajal, Susana Pérez, Javier Mateos, Tomás González.

Resumen:

This paper presents an analysis of the noise spectra of GaAs and GaN Schottky barrier diodes (SBD) operating under static and time varying conditions. The noise spectra obtained from Monte Carlo simulations (MC) of the SBDs show two resonances in the terahertz frequency region that are analyzed as a function of the SBD structure and working conditions. MC simulations are compared with published analytical models to describe the noise spectra of the SBDs.

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