Congreso internacional:
Año: 2010, Power performance of AlGaN/GaN Hemts as a function of Temperature
Medio de publicación:
Congreso: 34th WOCSDICE. Darmstadt, Alemania. 17-19 de Mayo de 2010
Autores: R. Cuerdo, J. Grajal, F. Calle
Resumen:
The thermal evolution of several GaN-based HEMTs on SiC sustrates has been studied from 100 K to 550 K, ecah 50 K. This work is focused on the power performance, but also the main DC and small signal parameters have been evaluated in order to correlate the whole transistor behaviour.
Disponibilidad del PDF:
No disponible
No disponible
En buscadores especializados:
Buscar en Google Scholar.
Buscar en Mendeley.
Buscar en Ieee Xplore.
Autores pertenecientes al grupo GMR: