Congreso: Microwave Integrated Circuits Conference (EuMIC), 2010 European. Paris, Francia. 27-28 de Septiembre de 2010

Autores: B. Alderman, M. Henry, A. Maestrini, J. Grajal, R. Zimmermann, H. Sanghera, Hui Wang, P. Wilkinson, D. Matheson

The development of GaAs Schottky diodes using substrate transfer techniques is presented. It is argued that these devices are limited in power handling by the choice of substrate material. To mitigate against these thermal effects, the migration to CVD diamond substrates is a logical progression. A significant programme aimed at developing this technology is presented.