Congreso: 21st International Symposium on Space Terahertz Technology. Oxford, Reino Unido. 23-25 de marzo de 2010

Autores: J.V. Siles, J. Grajal, A. di Carlo

This work analyzes some of the physical aspects that must be dealt with for terahertz circuit design based on Schottky diodes beyond 1 THz. The high operation frequencies and the small dimensions that will be required for the devices make it essential to employ physics-based numerical simulators for the device optimization. We present an overview of the possible alternatives and discuss the most adequate ones considering both accuracy and simulation time. As a reference, we employ a Monte Carlo simulator because it provides a numerical solution to the Boltzmann Transport Equation. Since high doping levels will be necessary at these frequencies, the MC analyses should be based on Fermi-Dirac statistics. An efficient method for the inclusion of Fermi-Dirac statistics in MC simulators for non-homogeneous devices is also outlined and the effects of using Fermi-Dirac statistics instead of Maxwell-Boltzmann in Schottky diode models are analyzed.