Congreso internacional:
Año: 2010, Harmonic generation and noise in GaAs and GaN Schottky diodes
Medio de publicación:
Congreso: 21st International Symposium on Space Terahertz Technology. Oxford, Reino Unido. 23-25 de marzo de 2010
Autores: Diego Pardo, Jesús Grajal, Beatriz Mencía, Susana Pérez, Javier Mateos, Tomás González
Resumen:
A semiconductor simulation tool based on Monte Carlo techniques has been used to analyse the performance of frequency multipliers in the millimetre-wave frequency range. Both power generation and noise properties have been compared for GaAs and GaN-based doublers. GaN could be an interesting option for frequency multiplication: efficiencies around 15 % can be reached for state-of-the-art carrier mobilities and noise performance is better than in GaAs-based doublers.
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