Congreso: 2009 IEEE International Ultrasonics Symposium. Roma, Italia. 20-23 de Septiembre de 2009

Autores: J. Pedrós, F. Calle, J. Grajal, Z. Bougrioua

A voltage tunable surface acoustic wave (SAW) phase shifter on a two-dimensional electron gas (2DEG) AlGaN/GaN heterostructure has been developed. The acoustoelectric interaction is field-effect modulated by means of an insulated gate placed in the acoustic path of a SAW delay line. The phase velocity under the gate is tuned by modifying the conductance of the 2DEG with a dc bias, while the insulating layer prevents the screening of the SAW piezoelectric fields by the gate. The device is compatible with the nitride transistor technology for signal processing and frequency control applications.