Congreso: ISSTT 2008. 19th International Symposium on Space Terahertz Technology. Groningen, The Netherlands. 28-30 de Abril 2008

Autores: J. V. Siles, J. Grajal

Gallium Nitride (GaN) is a very promising material for either electronic and optoelectronic devices because of its high breakdown field, and peak and saturated electron drift velocity. Hence, despite of its lower electron mobility, GaN Schottky diodes might represent a good alternative to GaAs Schottky diodes for LO power generation at millimetre-wave bands due to a much better power handling capabilities. Results from numerical simulations for a 200 GHz doubler predict a ~25 % lower conversion efficiency for GaN Schottky multipliers when compared to GaAs Schottky multipliers. However, higher power handling capabilities, an order of magnitude higher than GaAs with same anode sizes, are predicted for GaN diodes.