Congreso: 18th International Symposium on Space THz Technology (ISSTT 2007). Pasadena, California, USA. 21-23 de Marzo de 2007

Autores: J.V. Siles, J. Grajal, A. di Carlo

Flat-band conditions are usually reached in submillimeter-wave Schottky diode-based mixer operation. Numerical drift-diffusion (DD) models with conventional boundary conditions, which are based on the thermionic emission theory, do not correctly predict the behaviour of Schottky diodes under flat-band conditions so mixers performance cannot be accurately estimated. We employ a Monte Carlo simulator to analyze the performance of GaAs Schottky diodes in this operation regime. The results are employed for the refinement of DD model in the epitaxial layer. This new model is able to accurately predict the performance of submillimeter-wave mixers.