Congreso: 2006 IEEE International Ultrasonics Symposium. Vancouver, British Columbia, Canada. 2--6 de Octubre de 2006

Autores: J. Pedrós, R. Cuerdo, F. Calle, J. Grajal, J.L. Martínez-Chacón, Z. Bougrioua

The field-effect modulation of transducer- and gate-biased surface acoustic wave (SAW) filters on AlGaN/GaN heterostructures is studied. The filter response is governed by the depletion of the two dimensional electron gas and the band diagram modulation induced by the bias voltages. The electromagnetic feedthrough between transducers depends on the particular polarization scheme. The modulation of different SAWs and pseudo-SAWs supported by the heterostructure is compared