Congreso internacional:

Año: 2003, SAW devices on 2DEG AlGaN/GaN heterostructures

Medio de publicación:

Congreso: 12th European Workshop on Heterostructure Technology (HETECH 2003). San Rafael, Segovia. 12-15 Octubre, 2003

Autores: J. Pedros, F. Calle, J. Grajal, T. Palacios, A. Jiménez, F. Omnès, Z. Bougrioua

Resumen:

Active surface acoustic wave filters with voltage-controlled insertion losses have been achieved using AlGaN/GaN 2DEG heterostuctures as piezoelectric substrates. Transfer control is performed by moderate DC voltages between the fingers in either or both input and output interdigital transducers. These filters can be integrated into future MMIC circuits based on AlGaN/GaN high electron mobility transistors.

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