Congreso internacional:
Año: 2002, High frequency SAW devices on AlGaN: Fabrication, characterization and integration with optoelectronics
Congreso: IEEE International Symposium on Ultrasonics. Munich, Alemania. 8-11 octubre 2002
Autores: T. Palacios, F. Calle, J. Grajal, E. Monroy, M. Eickhoff, O. Ambacher, F. Omnes
In this paper, the technology and properties of surface acoustic wave (SAW) devices on AlN and GaN films are reviewed. The excellent characteristics of these materials for high frequency applications are demonstrated by the fabrication of SAW filters with central frequencies higher than 2.2 GHz. The thermal behavior of these filters has been analyzed. Finally, the integration of a SAW generator with a metal-semiconductor-metal photodetector is described, showing the important synergy resulting from such integration.