Congreso: 2002 Electronics Material Conference. Santa Bárbara, California, USA. 26-28 Junio 2002

Autores: T. Palacios, F. Calle, E. Monroy, J. Grajal, M. Eickhoff, O. Ambacher, R. Jiménez, C. Prieto

Passive electronic devices based on surface or bulk acoustic waves(SAW and BAW, respectively) have become a key component in manyradio-frequency systems. The compactness and reliability of these devicesrepresent an important advantage over the traditional choices likeRC discrete circuits and microstrip lines in the 50 MHz-1 GHz frequencyrange. However, in order to extend its applicability over 1 GHz, furtherresearch is needed both on new materials with high coupling constantand surface sound velocity, and on submicron technology to reduce thecritical dimensions of the device. III-Nitrides represent one of the mostpromising candidates for high frequency applications. In this work, differentacoustic-wave-related characteristics of AlGaN will be discussedand devices operating above 1 GHz will be demonstrated. AlGaN epilayers(1 to 2 μm thick) were grown on c-plane sapphire substrates by plasmaenhanced molecular beam epitaxy.