Congreso internacional:

Año: 2000, 2-D design of Schottky diodes

Medio de publicación:

Congreso: 8th IEEE International Conference on Teraherz Electronics. Darmstadt, Germany. 28-29 September 2000.

Autores: J. Grajal, D. Moreno, V. Krozer

Resumen:

The optimization of Schottky diode operation together with the design of circuits based on these devices Schottky Cont•t. can be accomplished with a developed 2-D drift-diffusion simulator. Evaluation of the impact of different geometries on the device performance and study of limiting processes like velocity saturation at high frequencies are analysed with I this simulation tool.

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